Epitaxial (EPI) Silicon Wafer

Kufotokozera

Epitaxial Silicon Waferkapena EPI Silicon Wafer, ndi mtanda wofewa wa semiconducting crystal wosanjikiza woyikidwa pamwamba pa kristalo wopukutidwa wa silicon gawo lapansi ndi kukula kwa epitaxial.The epitaxial wosanjikiza akhoza kukhala zinthu zofanana ndi gawo lapansi ndi homogeneous epitaxial kukula, kapena zosanjikiza wosanjikiza ndi khalidwe zofunika kwambiri ndi heterogeneous epitaxial kukula, amene atengera epitaxial kukula luso monga mankhwala nthunzi deposition CVD, madzi gawo epitaxy LPE, komanso molecular mtengo. epitaxy MBE kukwaniritsa khalidwe lapamwamba kwambiri la kachulukidwe kakang'ono kakang'ono komanso roughness yabwino pamwamba.Silicon Epitaxial Wafers amagwiritsidwa ntchito kwambiri popanga zida zapamwamba za semiconductor, zida zophatikizika kwambiri za semiconductor ICs, discrete ndi zida zamagetsi, zomwe zimagwiritsidwanso ntchito ngati gawo la diode ndi transistor kapena gawo lapansi la IC monga mtundu wa bipolar, MOS ndi zida za BiCMOS.Kuphatikiza apo, ma epitaxial angapo ndi filimu yokhuthala ya EPI silicon wafers nthawi zambiri amagwiritsidwa ntchito mu ma microelectronics, photonics ndi photovoltaics application.

Kutumiza

Epitaxial Silicon Wafers kapena EPI Silicon Wafer ku Western Minmetals (SC) Corporation atha kuperekedwa mu kukula kwa 4, 5 ndi 6 inch (100mm, 125mm, 150mm diameter), ndi orientation <100>, <111>, epilayer resistivity of <1ohm -cm kapena mpaka 150ohm-masentimita, ndi makulidwe a epilayer a<1um kapena mpaka 150um, kuti akwaniritse zofunikira zosiyanasiyana pamtunda womaliza wa mankhwala okhazikika kapena LTO, odzaza makaseti ndi bokosi la katoni kunja, kapena monga ndondomeko yokhazikika ku yankho langwiro. .

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Kufotokozera zaukadaulo

Epi Silicon Wafer

Epitaxial Silicon Waferskapena EPI Silicon Wafer ku Western Minmetals (SC) Corporation ikhoza kuperekedwa mu kukula kwa 4, 5 ndi 6 inchi (100mm, 125mm, 150mm m'mimba mwake), ndi orientation <100>, <111>, epilayer resistivity ya <1ohm-cm kapena mpaka 150ohm-masentimita, ndi makulidwe a epilayer a<1um kapena mpaka 150um, kuti akwaniritse zofunikira zosiyanasiyana pamtunda womaliza wa mankhwala okhazikika kapena a LTO, odzaza makaseti ndi bokosi la katoni kunja, kapena monga ndondomeko yokhazikika ku yankho langwiro.

Chizindikiro	Si
Nambala ya Atomiki	14
Kulemera kwa Atomiki	28.09
Gawo la Element	Metalloid
Gulu, Nthawi, Block	14, 3 p
Kapangidwe ka kristalo	Diamondi
Mtundu	Imvi yakuda
Melting Point	1414°C, 1687.15 K
Boiling Point	3265°C, 3538.15 K
Kuchuluka kwa 300K	2.329g/cm³
Intrinsic resistivity	3.2E5 Ω-cm
Nambala ya CAS	7440-21-3
Nambala ya EC	231-130-8

Ayi.	Zinthu	Mafotokozedwe Okhazikika
1	General Makhalidwe
1-1	Kukula	4"	5"	6"
1-2	Diameter mm	100±0.5	125±0.5	150±0.5
1-3	Kuwongolera	<100>, <111>	<100>, <111>	<100>, <111>
2	Makhalidwe a Epitaxial Layer
2-1	Njira Yakukula	CVD	CVD	CVD
2-2	Mtundu wa Conductivity	P kapena P+, N/ kapena N+	P kapena P+, N/ kapena N+	P kapena P+, N/ kapena N+
2-3	Makulidwe μm	2.5-120	2.5-120	2.5-120
2-4	Makulidwe Uniformity	≤3%	≤3%	≤3%
2-5	Kukaniza Ω-cm	0.1-50	0.1-50	0.1-50
2-6	Resistivity Uniformity	≤3%	≤5%	-
2-7	Kutalika kwa masentimita-2	<10	<10	<10
2-8	Ubwino Wapamwamba	Palibe chip, haze kapena peel lalanje zotsalira, ndi zina.
3	Sungani Makhalidwe a Substrate
3-1	Njira Yakukula	CZ	CZ	CZ
3-2	Mtundu wa Conductivity	P/N	P/N	P/N
3-3	Makulidwe μm	525-675	525-675	525-675
3-4	Makulidwe Uniformity max	3%	3%	3%
3-5	Kukaniza Ω-cm	Monga kufunikira	Monga kufunikira	Monga kufunikira
3-6	Resistivity Uniformity	5%	5%	5%
3-7	TTV max	10	10	10
3-8	Pepani μm max	30	30	30
3-9	Warp μm max	30	30	30
3-10	EPD cm-2 max	100	100	100
3-11	Mbiri ya Edge	Wozungulira	Wozungulira	Wozungulira
3-12	Ubwino Wapamwamba	Palibe chip, haze kapena peel lalanje zotsalira, ndi zina.
3-13	Back Side Finish	Etched kapena LTO (5000±500Å)
4	Kulongedza	Makaseti mkati, katoni bokosi kunja.

Silicon Epitaxial WafersAmagwiritsidwa ntchito kwambiri popanga zida zapamwamba za semiconductor, zida zophatikizika kwambiri za semiconductor ICs, zida za discrete ndi mphamvu, zomwe zimagwiritsidwanso ntchito ngati gawo la diode ndi transistor kapena gawo lapansi la IC monga mtundu wa bipolar, MOS ndi zida za BiCMOS.Kuphatikiza apo, ma epitaxial angapo ndi filimu yokhuthala ya EPI silicon wafers nthawi zambiri amagwiritsidwa ntchito mu ma microelectronics, photonics ndi photovoltaics application.