Gallium Phosphide GaP

Kufotokozera

Gallium Phosphide GaP, semiconductor yofunikira yamagetsi apadera monga zida zina za III-V, zowoneka bwino mu thermodynamically stable cubic ZB structure, ndi lalanje-yellow semitransparent crystal material yokhala ndi band yosiyana ya 2.26 eV (300K), yomwe ndi opangidwa kuchokera ku 6N 7N high purity gallium ndi phosphorous, ndipo amakula kukhala crystal imodzi ndi njira ya Liquid Encapsulated Czochralski (LEC).Gallium Phosphide crystal ndi doped sulfure kapena tellurium kuti apeze n-type semiconductor, ndi zinc doped ngati p-mtundu conductivity kuti apititse patsogolo kupanga mu mtanda wofunidwa, womwe umagwiritsidwa ntchito mu optical system, electronic and optoelectronics zipangizo.Single Crystal GaP wafer ikhoza kukonzedwa Epi-Ready kwa LPE, MOCVD ndi MBE epitaxial application.Mtundu wapamwamba wamtundu umodzi wa crystal Gallium phosphide GaP wafer p-type, n-type kapena undoped conductivity ku Western Minmetals (SC) Corporation ikhoza kuperekedwa mu kukula kwa 2 "ndi 3" (50mm, 75mm m'mimba mwake), orientation <100>, <111 > yokhala ndi mawonekedwe odulidwa, opukutidwa kapena okonzeka epi.

Mapulogalamu

Pokhala ndi mphamvu yotsika komanso yotsika kwambiri pakutulutsa kowala, Gallium phosphide GaP wafer ndi yoyenera kwa makina owonera monga otsika mtengo ofiira, lalanje, ndi ma diode obiriwira otulutsa magetsi (ma LED) komanso kuwala kwa LCD zachikasu ndi zobiriwira ndi zina ndi tchipisi ta LED Kuwala kotsika mpaka kwapakatikati, GaP imatengedwanso kwambiri ngati gawo loyambira la masensa a infrared ndi kupanga makamera owunikira.

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Kufotokozera zaukadaulo

Gallium Phosphide GaP

Wafer wapamwamba wamtundu umodzi wa crystal Gallium Phosphide GaP kapena gawo lapansi la p-mtundu, mtundu wa n-kapena osasinthika ku Western Minmetals (SC) Corporation atha kuperekedwa mu kukula kwa 2″ ndi 3" (50mm, 75mm) m'mimba mwake, mawonekedwe <100> , <111> yokhala ndi mapeto a pamwamba monga odulidwa, opukutidwa, okhazikika, opukutidwa, okonzeka epi-okonzeka mu chidebe chopyapyala chimodzi chosindikizidwa mu thumba la aluminiyamu yophatikizika kapena monga mwamakonda kuti athetse yankho.

Ayi.	Zinthu	Mafotokozedwe Okhazikika
1	Kukula kwa GaP	2"
2	Diameter mm	50.8 ± 0.5
3	Njira Yakukula	LEC
4	Mtundu wa Conductivity	P-mtundu / Zn-doped, N-mtundu / (S, Si, Te) -doped, Un-doped
5	Kuwongolera	<1 1 1> ± 0.5°
6	Makulidwe μm	(300-400) ± 20
7	Kukaniza Ω-cm	0.003-0.3
8	Gombe Loyang'ana (OF) mm	16 ±1
9	Chizindikiritso cha Flat (IF) mm	8 ±1
10	Hall Mobility cm2/Vs min	100
11	Chonyamulira Concentration cm^-3	(2-20) E17
12	Dislocation Kachulukidwe cm^-2max	2.00E+05
13	Pamwamba Pamwamba	P/E, P/P
14	Kulongedza	Chidebe chopyapyala chimodzi chosindikizidwa mu thumba la aluminium composite, bokosi la makatoni kunja

Linear Formula	GaP
Kulemera kwa Maselo	100.7
Kapangidwe ka kristalo	Zinc kuphatikiza
Maonekedwe	Orange olimba
Melting Point	N / A
Boiling Point	N / A
Kuchuluka kwa 300K	4.14g/cm³
Mphamvu Gap	2.26 eV
Intrinsic resistivity	N / A
Nambala ya CAS	12063-98-8
Nambala ya EC	235-057-2

Gallium Phosphide GaP Wafer, yokhala ndi magetsi otsika komanso okwera kwambiri potulutsa kuwala, ndi yoyenera kwa makina owonetsera kuwala monga zotsika mtengo zofiira, lalanje, ndi zobiriwira zotulutsa kuwala (ma LED) ndi kuwala kwa LCD zachikasu ndi zobiriwira ndi zina ndi tchipisi ta LED zotsika mpaka zapakati. Kuwala, GaP imatengedwanso kwambiri ngati gawo loyambira la masensa a infrared ndi kupanga makamera owunikira.