Indium Arsenide InAs

Kufotokozera

Indium arsenide InAs crystal ndi semiconductor ya gulu la III-V lopangidwa ndi osachepera 6N 7N pure Indium ndi Arsenic element ndikukula crystal imodzi ndi VGF kapena Liquid Encapsulated Czochralski ( LEC ) ndondomeko, maonekedwe a imvi, makhiristo a kiyubiki okhala ndi zinc-blende , malo osungunuka a 942 °C.Indium arsenide band gap ndi kusintha kwachindunji kofanana ndi gallium arsenide, ndipo bandi yoletsedwa m'lifupi ndi 0.45eV (300K).InAs crystal ili ndi mawonekedwe ofanana a magawo amagetsi, ma latisi osasunthika, kuyenda kwa ma elekitironi apamwamba komanso kusasunthika kochepa.Mwala wa cylindrical InAs wokulirapo ndi VGF kapena LEC ukhoza kudulidwa ndi kupangidwa kukhala chophatikizika chodulidwa, chokhazikika, chopukutidwa kapena epi-chokonzekera kukula kwa MBE kapena MOCVD epitaxial.

Mapulogalamu

Indium arsenide crystal wafer ndi gawo lapansi labwino kwambiri popangira zida za Hall ndi sensa ya maginito kuti imayenda bwino kwambiri ndi holo yake koma bandgap yamphamvu yocheperako, chinthu choyenera popanga zowunikira za infrared zokhala ndi kutalika kwa 1-3.8 µm zomwe zimagwiritsidwa ntchito pamagetsi apamwamba kwambiri kutentha kwa chipinda, komanso ma lasers apakati a kutalika kwa infrared super lattice, zida zapakatikati mwa infrared LEDs zopangidwa ndi mawonekedwe ake a 2-14 μm wavelength.Kuphatikiza apo, InAs ndi gawo lapansi labwino kwambiri lothandizira ma InGaAs, InAsSb, InAsPSb & InNAsSb kapena AlGaSb super lattice structure etc.

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Kufotokozera zaukadaulo

Indium arsenide

Inu As

Indium Arsenide Crystal Waferndi gawo laling'ono lopangira zida za Hall ndi sensor ya maginito chifukwa chakuyenda kwake kwa holo yayikulu koma bandgap yamphamvu yocheperako, chinthu choyenera popanga zowunikira za infrared zokhala ndi kutalika kwa 1-3.8 µm zomwe zimagwiritsidwa ntchito pamagetsi apamwamba kutentha kwachipinda, komanso ma infrared super lattice lasers apakati, zida zapakatikati mwa infrared za LED zopangira mawonekedwe ake a 2-14 μm wavelength.Kuphatikiza apo, InAs ndi gawo lapansi labwino kwambiri lothandizira ma InGaAs, InAsSb, InAsPSb & InNAsSb kapena AlGaSb super lattice structure etc..

Ayi.	Zinthu	Mafotokozedwe Okhazikika
1	Kukula	2"	3"	4"
2	Diameter mm	50.5±0.5	76.2±0.5	100±0.5
3	Njira Yakukula	LEC	LEC	LEC
4	Conductivity	P-mtundu/Zn-doped, N-type/S-doped, Un-doped
5	Kuwongolera	(100)±0.5°, (111)±0.5°
6	Makulidwe μm	500 ± 25	600 ± 25	800 ± 25
7	Oriental Flat mm	16 ±2	22 ±2	32 ±2
8	Chizindikiritso Flat mm	8 ±1	11 ±1	18 ±1
9	Kusuntha kwa cm2 / Vs	60-300, ≥2000 kapena pakufunika
10	Chonyamulira Concentration cm-3	(3-80)E17 kapena ≤5E16
11	TTV max	10	10	10
12	Pepani μm max	10	10	10
13	Warp μm max	15	15	15
14	Kachulukidwe wa dislocation cm-2 max	1000	2000	5000
15	Pamwamba Pamwamba	P/E, P/P	P/E, P/P	P/E, P/P
16	Kulongedza	Chidebe chopyapyala chimodzi chosindikizidwa mu thumba la Aluminium.

Linear Formula	Inu As
Kulemera kwa Maselo	189.74
Kapangidwe ka kristalo	Zinc kuphatikiza
Maonekedwe	Gray crystalline solid
Melting Point	(936-942) °C
Boiling Point	N / A
Kuchuluka kwa 300K	5.67g/cm³
Mphamvu Gap	0.354 eV
Intrinsic Resistivity	0.16 Ω-cm
Nambala ya CAS	1303-11-3
Nambala ya EC	215-115-3

Indium Arsenide InAsku Western Minmetals (SC) Corporation ikhoza kuperekedwa ngati mtanda wa polycrystalline kapena makristalo amodzi odulidwa, okhazikika, opukutidwa, kapena okonzeka epi kukula kwa 2" 3" ndi 4" (50mm, 75mm, 100mm) awiri, ndi p-mtundu, n-mtundu kapena un-doped conductivity ndi <111> kapena <100> orientation.Mafotokozedwe makonda ndi njira yabwino kwa makasitomala athu padziko lonse.