Gallium Nitride GaN

Kufotokozera

Gallium Nitride GaN, CAS 25617-97-4, molecular mass 83.73, wurtzite crystal structure, ndi binary compound direct band-gap semiconductor ya gulu III-V yokulirapo ndi njira yopangira ammonothermal process.Gallium Nitride GaN Wodziwika ndi mtundu wangwiro wa crystalline, matenthedwe apamwamba kwambiri, kuyenda kwa ma elekitironi apamwamba, malo ofunikira kwambiri amagetsi ndi bandgap yayikulu, Gallium Nitride GaN ili ndi mawonekedwe ofunikira mu ma optoelectronics ndi ma sensing ntchito.

Mapulogalamu

Gallium Nitride GaN ndiyoyenera kupanga zida zopangira zida zamagetsi zowoneka bwino komanso zowoneka bwino zotulutsa ma diode a LED, zida za laser ndi ma optoelectronics monga ma laser obiriwira ndi buluu, zinthu zamtundu wa ma electron mobility transistors (HEMTs) komanso zamphamvu kwambiri. ndi mafakitale opangira zida zotentha kwambiri.

Kutumiza

Gallium Nitride GaN ku Western Minmetals (SC) Corporation atha kuperekedwa mu kukula kwa yozungulira yopyapyala inchi 2 ” kapena 4 ” (50mm, 100mm) ndi yopyapyala masikweya 10 × 10 kapena 10 × 5 mm.Kukula kulikonse kosinthidwa ndi mafotokozedwe ndi njira yabwino yothetsera makasitomala athu padziko lonse lapansi.

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Kufotokozera zaukadaulo

Gallium Nitride GaN

Gallium Nitride GaNku Western Minmetals (SC) Corporation atha kuperekedwa mu kukula kwa yozungulira yopyapyala inchi 2 ” kapena 4 ” (50mm, 100mm) ndi yopingasa lalikulu 10 × 10 kapena 10 × 5 mm.Kukula kulikonse kosinthidwa ndi mafotokozedwe ndi njira yabwino yothetsera makasitomala athu padziko lonse lapansi.

Ayi.	Zinthu	Mafotokozedwe Okhazikika
1	Maonekedwe	Zozungulira	Zozungulira	Square
2	Kukula	2"	4"	--
3	Diameter mm	50.8±0.5	100±0.5	--
4	Utali Wammbali mm	--	--	10x10 kapena 10x5
5	Njira Yakukula	HVPE	HVPE	HVPE
6	Kuwongolera	C-ndege (0001)	C-ndege (0001)	C-ndege (0001)
7	Mtundu wa Conductivity	N-mtundu/Si-doped, Un-doped, Semi-insulating
8	Kukaniza Ω-cm	<0.1, <0.05,>1E6
9	Makulidwe μm	350 ± 25	350 ± 25	350 ± 25
10	TTV max	15	15	15
11	Pepani μm max	20	20	20
12	EPD cm-2	<5E8	<5E8	<5E8
13	Pamwamba Pamwamba	P/E, P/P	P/E, P/P	P/E, P/P
14	Kukalipa Pamwamba	Kutsogolo: ≤0.2nm, Kumbuyo: 0.5-1.5μm kapena ≤0.2nm
15	Kulongedza	Chidebe chopyapyala chimodzi chosindikizidwa mu thumba la Aluminium.

Linear Formula	GaN
Kulemera kwa Maselo	83.73
Kapangidwe ka kristalo	Zinc blende/Wurzite
Maonekedwe	Translucent zolimba
Melting Point	2500 ° C
Boiling Point	N / A
Kuchuluka kwa 300K	6.15g/cm³
Mphamvu Gap	(3.2-3.29) eV pa 300K
Intrinsic resistivity	> 1E8 Ω-cm
Nambala ya CAS	25617-97-4
Nambala ya EC	247-129-0

Gallium Nitride GaNndizoyenera kupanga zida zopangira zida zapamwamba kwambiri komanso zida zowoneka bwino zotulutsa ma diode a LED, zida za laser ndi optoelectronics monga ma laser obiriwira ndi abuluu, zinthu zamtundu wa ma electron mobility transistors (HEMTs) komanso zamphamvu kwambiri komanso zapamwamba. kutentha zipangizo kupanga makampani.