FZ NTD Silicon Wafer

Kufotokozera

FZ-NTD Silicon Wafer, yotchedwa Float-Zone Neutron Transmutation Doped Silicon Wafer.Silicon yopanda okosijeni, yoyera kwambiri komanso silicon yamphamvu kwambiri yolimbana nayo imatha kupezeka by Float-zone FZ (Zone-Floating) kukula kwa makristalo, High resistivity FZ silikoni krustalo nthawi zambiri doped ndi Neutron Transmutation Doping (NTD) ndondomeko, mmene nyutroni cheza pa undoped zoyandama zone silikoni kuti silikoni isotopu kutsekeredwa ndi manyutroni ndiyeno kuwola mu dopants zofunika kukwaniritsa cholinga doping.Kupyolera mukusintha mulingo wa radiation ya neutron, resistivity imatha kusinthidwa popanda kuyambitsa ma dopants akunja ndikuwonetsetsa chiyero chakuthupi.FZ NTD silicon wafers (Float Zone Neutron Transmutation Doping Silicon) ali ndi luso lapamwamba laukadaulo wa yunifolomu ya doping komanso kugawa kofananira kwa radial resistivity, milingo yotsika kwambiri yonyansa,komanso moyo wonyamula anthu ochepa kwambiri.

Kutumiza

Monga ogulitsa otsogola pamsika wa NTD silikoni pakulonjeza kugwiritsa ntchito mphamvu, ndikutsatira zomwe zikukulirakulira kwa zowotcha zapamwamba, zapamwamba za FZ NTD silicon wafer.ku Western Minmetals (SC) Corporation ikhoza kuperekedwa kwa makasitomala athu padziko lonse lapansi kukula kosiyanasiyana kuyambira 2 ″, 3 ″, 4 ″, 5 ″ ndi 6 ″ m'mimba mwake (50mm, 75mm, 100mm, 125mm ndi 150mm) ndi mitundu yosiyanasiyana ya resistivity. 5 mpaka 2000 ohm.cm mu <1-1-1>, <1-1-0>, <1-0-0> zowongolera zokhala ndi zodulidwa, zopindika, zokhazikika komanso zopukutidwa mu phukusi la thovu kapena makaseti , kapena monga makonda malinga ndi yankho langwiro.

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FZ NTD Silicon Wafer

Monga otsogola pamsika wa FZ NTD silikoni pakulonjeza ntchito zamagetsi, ndikutsatira zomwe zikukulirakulira kwa zowotcha zapamwamba zapamwamba, FZ NTD silicon wafer yapamwamba ku Western Minmetals (SC) Corporation ikhoza kuperekedwa kwa makasitomala athu padziko lonse lapansi kukula kwake kosiyanasiyana kuyambira 2. ″ mpaka 6″ m'mimba mwake (50, 75, 100, 125 ndi 150mm) ndi mitundu yosiyanasiyana ya resistivity 5 mpaka 2000 ohm-cm mu <1-1-1>, <1-1-0>, <1-0- 0> zowongolera zokhala ndi zokutira, zokhazikika komanso zopukutidwa pamwamba pabokosi la thovu kapena makaseti, bokosi la makatoni kunja kapena monga momwe makonda anu amathandizira.

Ayi.	Zinthu	Mafotokozedwe Okhazikika
1	Kukula	2"	3"	4"	5"	6"
2	Diameter	50.8±0.3	76.2±0.3	100±0.5	125±0.5	150±0.5
3	Conductivity	n-mtundu	n-mtundu	n-mtundu	n-mtundu	n-mtundu
4	Kuwongolera	<100>, <111>, <110>
5	Makulidwe μm	279, 381, 425, 525, 575, 625, 675, 725 kapena pakufunika
6	Kukaniza Ω-cm	36-44, 44-52, 90-110, 100-250, 200-400 kapena pakufunika
7	Mtengo RRV	8%, 10%, 12%
8	TTV max	10	10	10	10	10
9	Bow/Warp μm max	30	30	30	30	30
10	Carrier Lifetime μs	> 200, > 300, > 400 kapena ngati pakufunika
11	Pamwamba Pamwamba	Monga-odulidwa, Wopukutidwa, Wopukutidwa
12	Kulongedza	Bokosi la thovu mkati, bokosi la makatoni kunja.

Basic Material Parameter

Chizindikiro	Si
Nambala ya Atomiki	14
Kulemera kwa Atomiki	28.09
Gawo la Element	Metalloid
Gulu, Nthawi, Block	14, 3 p
Kapangidwe ka kristalo	Diamondi
Mtundu	Imvi yakuda
Melting Point	1414°C, 1687.15 K
Boiling Point	3265°C, 3538.15 K
Kuchuluka kwa 300K	2.329g/cm³
Intrinsic resistivity	3.2E5 Ω-cm
Nambala ya CAS	7440-21-3
Nambala ya EC	231-130-8

FZ-NTD Silicon WaferNdikofunikira kwambiri pakugwiritsa ntchito mphamvu zambiri, umisiri wozindikira komanso mu zida za semiconductor zomwe zimayenera kugwira ntchito m'malo ovuta kwambiri kapena pomwe kusiyanasiyana kwapang'onopang'ono kumafunika, monga chipata cha thyristor GTO, static induction thyristor SITH, chimphona. transistor GTR, insulate-gate bipolar transistor IGBT, owonjezera HV diode PIN.FZ NTD n-mtundu wa silicon wafer ndiwonso ntchito yayikulu yosinthira ma frequency osiyanasiyana, zosinthira, zida zowongolera mphamvu zazikulu, zida zatsopano zamagetsi, zida zamagetsi, silicon rectifier SR, silicon control SCR, ndi zida zowonera monga magalasi ndi mawindo. kwa mapulogalamu a terahertz.