Gallium Antimonide GaSb

Kufotokozera

Gallium Antimonide GaSb, semiconductor wa gulu la III-V mankhwala okhala ndi zinc-blende lattice structure, amapangidwa ndi 6N 7N high purity gallium ndi zinthu za antimoni, ndipo amakula mpaka kristalo ndi njira ya LEC kuchokera ku njira yachisanu ya polycrystalline ingot kapena njira ya VGF ndi EPD<1000cm^-3.GaSb wafer amatha kudulidwa ndikupangidwa pambuyo pake kuchokera ku crystalline ingot imodzi yokhala ndi magetsi ofananirako, mawonekedwe apadera komanso osasinthasintha, komanso kachulukidwe kakang'ono, kalozera wowoneka bwino kwambiri kuposa mitundu ina yambiri yopanda zitsulo.GaSb ikhoza kukonzedwa ndi kusankha kwakukulu mumayendedwe enieni kapena otalikirapo, ndende yotsika kapena yapamwamba, yomaliza bwino komanso kukula kwa MBE kapena MOCVD epitaxial.Gawo laling'ono la Gallium Antimonide likugwiritsidwa ntchito pazithunzi zapamwamba kwambiri za optic ndi optoelectronic monga kupanga zowunikira zithunzi, zowunikira za infrared zomwe zimakhala ndi moyo wautali, kumva kwambiri komanso kudalirika, gawo la photoresist, ma infrared LEDs ndi ma lasers, ma transistors, cell matenthedwe a photovoltaic cell. ndi thermo-photovoltaic systems.

Kutumiza

Gallium Antimonide GaSb ku Western Minmetals (SC) Corporation ikhoza kuperekedwa ndi mtundu wa n, p-type komanso undoped semi-insulating conductivity mu kukula kwa 2 "3" ndi 4" (50mm, 75mm, 100mm) m'mimba mwake, mawonekedwe <111> kapena <100>, ndi mapeto a wafer pamwamba monga odulidwa, okhazikika, opukutidwa kapena apamwamba okonzeka epitaxy.Magawo onse amalembedwa ndi laser kuti adziwe.Pakadali pano, polycrystalline gallium antimonide GaSb mtanda imasinthidwanso makonda popempha yankho langwiro.

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Kufotokozera zaukadaulo

Mankhwala a Gallium Antimonide

GaSb

Gallium Antimonide GaSbgawo lapansi likugwiritsidwa ntchito pamawonekedwe apamwamba kwambiri azithunzi ndi ma optoelectronic monga kupanga zowunikira zithunzi, zowunikira ma infrared zomwe zimakhala ndi moyo wautali, kumva kwambiri komanso kudalirika, gawo la photoresist, ma infrared LED ndi ma lasers, ma transistors, ma cell matenthedwe a photovoltaic ndi thermo. - photovoltaic systems.

	Zinthu	Mafotokozedwe Okhazikika
1	Kukula	2"	3"	4"
2	Diameter mm	50.5±0.5	76.2±0.5	100±0.5
3	Njira Yakukula	LEC	LEC	LEC
4	Conductivity	P-mtundu/Zn-doped, Un-doped, N-type/Te-doped
5	Kuwongolera	(100)±0.5°, (111)±0.5°
6	Makulidwe μm	500 ± 25	600 ± 25	800 ± 25
7	Oriental Flat mm	16 ±2	22 ±1	32.5 ± 1
8	Chizindikiritso Flat mm	8 ±1	11 ±1	18 ±1
9	Kusuntha kwa cm2 / Vs	200-3500 kapena pakufunika
10	Chonyamulira Concentration cm-3	(1-100)E17 kapena pakufunika
11	TTV max	15	15	15
12	Pepani μm max	15	15	15
13	Warp μm max	20	20	20
14	Kachulukidwe wa dislocation cm-2 max	500	1000	2000
15	Pamwamba Pamwamba	P/E, P/P	P/E, P/P	P/E, P/P
16	Kulongedza	Chidebe chopyapyala chimodzi chosindikizidwa mu thumba la Aluminium.

Linear Formula	GaSb
Kulemera kwa Maselo	191.48
Kapangidwe ka kristalo	Zinc kuphatikiza
Maonekedwe	Gray crystalline solid
Melting Point	710 ° C
Boiling Point	N / A
Kuchuluka kwa 300K	5.61g/cm³
Mphamvu Gap	0.726 eV
Intrinsic resistivity	1E3 Ω-cm
Nambala ya CAS	12064-03-8
Nambala ya EC	235-058-8

Gallium Antimonide GaSbku Western Minmetals (SC) Corporation atha kuperekedwa ndi mtundu wa n, p-type ndi undoped semi-insulating conductivity mu kukula kwa 2" 3" ndi 4" (50mm, 75mm, 100mm) awiri, orientation <111> kapena <100 >, ndi kumaliza kosalala kokhala ngati kudulidwa, kuzikika, zopukutidwa kapena zapamwamba zokonzeka za epitaxy.Magawo onse amalembedwa ndi laser kuti adziwe.Pakadali pano, polycrystalline gallium antimonide GaSb mtanda imasinthidwanso makonda popempha yankho langwiro.