Kufotokozera
Gallium ArsenideGas ndi a mwachindunji gulu kusiyana pawiri semiconductor wa gulu III-V apanga ndi osachepera 6N 7N mkulu chiyero gallium ndi arsenic element, ndipo wamkulu kristalo ndi VGF kapena LEC ndondomeko kuchokera mkulu chiyero polycrystalline gallium arsenide, imvi mtundu maonekedwe, makhiristo kiyubiki ndi dongosolo nthaka-blende.Ndi doping ya kaboni, silicon, tellurium kapena zinc kuti mupeze n-mtundu kapena p-mtundu ndi semi-insulating conductivity motsatana, cylindrical InAs kristalo imatha kudulidwa ndikupangidwa kuti ikhale yopanda kanthu ndi yophika ngati yodulidwa, yokhazikika, yopukutidwa kapena epi. -okonzeka MBE kapena MOCVD epitaxial kukula.Gallium Arsenide wafer imagwiritsidwa ntchito kwambiri kupanga zida zamagetsi monga ma infrared light-emitting diode, ma laser diode, mawindo owoneka bwino, ma transistors FET, mzere wa digito ICs ndi ma cell a solar.Zida za GaA ndizothandiza pamawayilesi apamwamba kwambiri komanso ma switching amagetsi othamanga, kugwiritsa ntchito ma siginecha ofooka.Kuphatikiza apo, gawo lapansi la Gallium Arsenide ndi chinthu choyenera kupanga zida za RF, ma frequency a microwave ndi monolithic ICs, ndi zida za LED munjira yolumikizirana ndi kuwala ndi machitidwe owongolera pamayendedwe ake odzaza holo, mphamvu yayikulu komanso kukhazikika kwa kutentha.
Kutumiza
Gallium Arsenide GaAs ku Western Minmetals (SC) Corporation ikhoza kuperekedwa ngati mtanda wa polycrystalline kapena chofufumitsa cha kristalo chimodzi mumiphika yodulidwa, yokhazikika, yopukutidwa, kapena yokonzeka epi kukula kwa 2" 3" 4" ndi 6" (50mm, 75mm, 100mm, 150mm) m'mimba mwake, ndi p-mtundu, n-mtundu kapena semi-insulating conductivity, ndi <111> kapena <100> yolunjika.Mafotokozedwe makonda ndi njira yabwino kwa makasitomala athu padziko lonse.
Kufotokozera zaukadaulo
Gallium Arsenide Gaszopyapyala zimagwiritsidwa ntchito kwambiri kupanga zida zamagetsi monga ma infrared light-emitting diode, ma laser diode, mawindo owoneka bwino, ma transistors FET, mzere wa digito ICs ndi ma cell a solar.Zida za GaA ndizothandiza pamawayilesi apamwamba kwambiri komanso ma switching amagetsi othamanga, kugwiritsa ntchito ma siginecha ofooka.Kuphatikiza apo, gawo lapansi la Gallium Arsenide ndi chinthu choyenera kupanga zida za RF, ma frequency a microwave ndi monolithic ICs, ndi zida za LED munjira yolumikizirana ndi kuwala ndi machitidwe owongolera pamayendedwe ake odzaza holo, mphamvu yayikulu komanso kukhazikika kwa kutentha.
Ayi. | Zinthu | Mafotokozedwe Okhazikika | |||
1 | Kukula | 2" | 3" | 4" | 6" |
2 | Diameter mm | 50.8±0.3 | 76.2±0.3 | 100±0.5 | 150±0.5 |
3 | Njira Yakukula | Zithunzi za VGF | Zithunzi za VGF | Zithunzi za VGF | Zithunzi za VGF |
4 | Mtundu wa Conductivity | N-Type/Si kapena Te-doped, P-Type/Zn-doped, Semi-Insulating/Un-doped | |||
5 | Kuwongolera | (100)±0.5° | (100)±0.5° | (100)±0.5° | (100)±0.5° |
6 | Makulidwe μm | 350 ± 25 | 625 ± 25 | 625 ± 25 | 650 ± 25 |
7 | Oriental Flat mm | 17 ±1 | 22 ±1 | 32 ±1 | Notch |
8 | Chizindikiritso Flat mm | 7 ±1 | 12 ±1 | 18 ±1 | - |
9 | Kukaniza Ω-cm | (1-9)E(-3) ya p-mtundu kapena n-mtundu, (1-10)E8 ya semi-insulating | |||
10 | Kuyenda cm2/vs | 50-120 ya p-mtundu, (1-2.5) E3 ya n-mtundu, ≥4000 ya theka-insulating | |||
11 | Chonyamulira Concentration cm-3 | (5-50)E18 ya p-mtundu, (0.8-4)E18 ya n-mtundu | |||
12 | TTV max | 10 | 10 | 10 | 10 |
13 | Pepani μm max | 30 | 30 | 30 | 30 |
14 | Warp μm max | 30 | 30 | 30 | 30 |
15 | EPD cm-2 | 5000 | 5000 | 5000 | 5000 |
16 | Pamwamba Pamwamba | P/E, P/P | P/E, P/P | P/E, P/P | P/E, P/P |
17 | Kulongedza | Chidebe chopyapyala chimodzi chosindikizidwa mu thumba la aluminium composite. | |||
18 | Ndemanga | Wafer wamakina a GaAs amapezekanso mukafunsidwa. |
Linear Formula | Gas |
Kulemera kwa Maselo | 144.64 |
Kapangidwe ka kristalo | Zinc kuphatikiza |
Maonekedwe | Gray crystalline solid |
Melting Point | 1400°C, 2550°F |
Boiling Point | N / A |
Kuchuluka kwa 300K | 5.32g/cm3 |
Mphamvu Gap | 1.424 eV |
Intrinsic resistivity | 3.3E8 Ω-cm |
Nambala ya CAS | 1303-00-0 |
Nambala ya EC | 215-114-8 |
Gallium Arsenide Gasku Western Minmetals (SC) Corporation ikhoza kuperekedwa ngati mtanda wa polycrystalline kapena mkate wa kristalo umodzi mumiphika yodulidwa, yokhazikika, yopukutidwa, kapena yokonzeka epi kukula kwa 2 "3" 4" ndi 6" (50mm, 75mm, 100mm , 150mm) awiri, okhala ndi p-mtundu, n-mtundu kapena semi-insulating conductivity, ndi <111> kapena <100> yolunjika.Mafotokozedwe makonda ndi njira yabwino kwa makasitomala athu padziko lonse.
Malangizo Ogulira
Gallium Arsenide Wafer