Kufotokozera
Indi Antimonide InSb, semiconductor wa gulu la III-V crystalline mankhwala okhala ndi zinc-blende lattice structure, amapangidwa ndi 6N 7N high purity Indium ndi antimony elements, ndipo amakula kristalo imodzi mwa njira ya VGF kapena njira ya Liquid Encapsulated Czochralski LEC kuchokera ku multiple zone refined polycrystalline ingot, zomwe zimatha kudulidwa ndikupangidwa kukhala kanyumba kakang'ono ndikutchinga pambuyo pake.InSb ndi semiconductor yachindunji yokhala ndi bandi yopapatiza ya 0.17eV kutentha kwachipinda, kukhudzika kwakukulu kwa 1-5μm wavelength ndi Ultra high holo kuyenda.Indium Antimonide InSb n-mtundu, p-type ndi semi-insulating conductivity at Western Minmetals (SC) Corporation atha kuperekedwa mu kukula kwa 1″ 2″ 3″ ndi 4” (30mm, 50mm, 75mm, 100mm) awiri, orientation < 111> kapena <100>, ndi kumaliza pamwamba pake ngati-odulidwa, wokutidwa, wokhazikika komanso wopukutidwa.Indium Antimonide InSb chandamale cha Dia.50-80mm yokhala ndi un-doped n-type ikupezekanso.Pakadali pano, polycrystalline indium antimonide InSb (multicrystal InSb) yokhala ndi zotupa zosakhazikika, kapena zopanda kanthu (15-40) x (40-80) mm, ndi mipiringidzo yozungulira ya D30-80mm imasinthidwanso mwamakonda mukapempha yankho langwiro.
Kugwiritsa ntchito
Indium Antimonide InSb ndi gawo limodzi labwino kwambiri lopangira zida ndi zida zambiri zamakono, monga njira yopangira matenthedwe otenthetsera, FLIR system, hall element ndi magnetoresistance effect element, infrared homing missile guide system, infrared photodetector sensor sensor. , sensor yolondola kwambiri ya maginito ndi rotary resistivity, focal planar arrays, komanso kusinthidwa ngati gwero la radiation ya terahertz komanso telesikopu yakuthambo ya infrared ndi zina.
Kufotokozera zaukadaulo
Indium Antimonide Substrate(InSb Substrate, InSb Wafer) n-mtundu kapena p-mtundu ku Western Minmetals (SC) Corporation atha kuperekedwa mu kukula kwa 1 "2" 3" ndi 4" (30, 50, 75 ndi 100mm) awiri, orientation <111> kapena <100>, ndi yokhala ndi zopendekera pamwamba zopendekera, zozikika, zopukutidwa. Indium Antimonide Single Crystal bar (InSb Monocrystal bar) imathanso kuperekedwa mukapempha.
Indium AntimonidePolycrystalline (InSb Polycrystalline, kapena multicrystal InSb) yokhala ndi kukula kosakhazikika, kapena yopanda kanthu (15-40) x(40-80)mm imasinthidwanso mwamakonda mukafunsidwa kuti ipeze yankho labwino kwambiri.
Panthawiyi, Indium Antimonide Target (InSb Target) ya Dia.50-80mm yokhala ndi un-doped n-type imapezekanso.
Ayi. | Zinthu | Mafotokozedwe Okhazikika | ||
1 | Indium Antimonide Substrate | 2" | 3" | 4" |
2 | Diameter mm | 50.5±0.5 | 76.2±0.5 | 100±0.5 |
3 | Njira Yakukula | LEC | LEC | LEC |
4 | Conductivity | P-type/Zn,Ge doped, N-type/Te-doped, Un-doped | ||
5 | Kuwongolera | (100)±0.5°, (111)±0.5° | ||
6 | Makulidwe μm | 500 ± 25 | 600 ± 25 | 800 ± 25 |
7 | Oriental Flat mm | 16 ±2 | 22 ±1 | 32.5 ± 1 |
8 | Chizindikiritso Flat mm | 8 ±1 | 11 ±1 | 18 ±1 |
9 | Kusuntha kwa cm2 / Vs | 1-7E5 N/un-doped, 3E5-2E4 N/Te-doped, 8-0.6E3 kapena ≤8E13 P/Ge-doped | ||
10 | Chonyamulira Concentration cm-3 | 6E13-3E14 N/un-doped, 3E14-2E18 N/Te-doped, 1E14-9E17 kapena <1E14 P/Ge-doped | ||
11 | TTV max | 15 | 15 | 15 |
12 | Pepani μm max | 15 | 15 | 15 |
13 | Warp μm max | 20 | 20 | 20 |
14 | Kachulukidwe wa dislocation cm-2 max | 50 | 50 | 50 |
15 | Pamwamba Pamwamba | P/E, P/P | P/E, P/P | P/E, P/P |
16 | Kulongedza | Chidebe chopyapyala chimodzi chosindikizidwa mu thumba la Aluminium. |
Ayi. | Zinthu | Mafotokozedwe Okhazikika | |
INdi Antimonide Polycrystalline | Indium Antimonide Target | ||
1 | Conductivity | Zosinthidwa | Zosinthidwa |
2 | Chonyamulira Concentration cm-3 | 6E13-3E14 | 1.9-2.1E16 |
3 | Kuyenda cm2/Vs | 5-7E5 | 6.9-7.9E4 |
4 | Kukula | 15-40x40-80 mm | D (50-80) mm |
5 | Kulongedza | Mu chikwama cha aluminiyamu chophatikizika, bokosi la makatoni kunja |
Linear Formula | InSb |
Kulemera kwa Maselo | 236.58 |
Kapangidwe ka kristalo | Zinc kuphatikiza |
Maonekedwe | Makristasi otuwa achitsulo |
Melting Point | 527 ° C |
Boiling Point | N / A |
Kuchuluka kwa 300K | 5.78g/cm3 |
Mphamvu Gap | 0.17 eV |
Intrinsic resistivity | 4E(-3) Ω-cm |
Nambala ya CAS | 1312-41-0 |
Nambala ya EC | 215-192-3 |
Indium Antimonide InSbchowotcha ndi gawo limodzi labwino kwambiri lopangira zida ndi zida zambiri zamakono, monga njira yaukadaulo yowunikira matenthedwe, FLIR system, hall element ndi magnetoresistance effect element, infrared homing missile guide system, sensor yoyankha kwambiri ya infrared photodetector, yapamwamba. -Kulondola kwa maginito ndi rotary resistivity sensor, focal planar arrays, komanso kusinthidwa ngati gwero la radiation ya terahertz komanso telescope yakuthambo yakuthambo ya infrared etc.
Malangizo Ogulira
Indium Antimonide InSb