Indium oxide

Kufotokozera

Indium oxide mu₂O₃kapena indium trioxide 99.99%, 99.995%, 99.999% ndi 99.9999%, micropowder kapena nanoparticle kuwala-chikasu olimba ufa, CAS 1312-43-3, kachulukidwe 7.18g/cm³ndi kusungunuka mozungulira 2000 °C, ndi chinthu chokhazikika ngati ceramic chomwe sichisungunuka m'madzi, koma chosungunuka mu asidi otentha.Indium oxide mu₂O₃ndi mtundu wa n-mtundu wa semiconductor ntchito zakuthupi zokhala ndi zopinga zazing'ono, zochitika zapamwamba zothandizira komanso kusiyana kwakukulu kwa mapulogalamu a optoelectronic. Indium oxide mu₂O₃ku Western Minmetals (SC) Corporation ikhoza kuperekedwa ndi chiyero cha 99.99%, 99.995%, 99.999% ndi 99.9999% mu kukula kwa 2-10 micron kapena -100 mesh ufa ndi nano grade, 1kg yodzaza mu botolo la polyethylene ndi thumba lapulasitiki losindikizidwa, kapena 1kg, 2kg 5kg mu thumba gulu zotayidwa ndi katoni bokosi kunja, kapena monga specifications makonda kwa mayankho wangwiro.

Mapulogalamu

Indium oxide mu₂O₃amagwiritsidwa ntchito ponseponse mu photoelectric, sensa ya gasi, filimu yopyapyala yofiira yofiira, chothandizira, zowonjezera zamtundu wa galasi, mabatire amchere, ndi ma switch amagetsi amakono ndi zolumikizira, zokutira zoteteza za galasi lachitsulo, komanso filimu ya semiconductor ya electro-optical. kuwonetsera ndi zina₂O₃ndiye gawo lalikulu la chandamale cha ITO chowonetsera, mawindo osagwiritsa ntchito mphamvu ndi ma photovoltaics.Komanso, In₂O₃ali ngati chinthu chotsutsa mu ICs kuti apange heterojunctions ndi zipangizo monga p-InP, n-GaAs, n-Si ndi semiconductors ena.Pakadali pano, Kukhala ndi zotsatira zapamtunda, kukula kochepa ndi macroscopic quantum tunneling effect,Nano inu₂O₃ndi makamaka zokutira kuwala ndi antistatic, mandala conductive zokutira ntchito.

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Kufotokozera zaukadaulo

In₂O₃

Maonekedwe	Ufa wachikasu
Kulemera kwa Maselo	277.63
Kuchulukana	7.18g/cm³
Melting Point	2000°C
CAS No.	1312-43-2

Ayi.	Kanthu		Mafotokozedwe Okhazikika
1	Purity Mu₂O₃≥		Kusayera (ICP-MS Test Report PPM Max iliyonse)
2	4N	99.99%	Cu/Al 20, Ti 3.0, Pb 4.0, Sn 7.0, Cd 8.0, Fe 15	Zonse ≤100
	4n5 pa	99.995%	Cu/Al/Cd/Sn/Ti/Ni/As/Zn 1.0, Si 2.0, Fe/Ca 5.0	Zonse ≤50
	5N	99.999%	Cu/Pb/Cd/Fe/Ni 0.5, Ca/Sn/Ti 1.0	Zonse ≤10
	6N	99.9999%	Zikupezeka popempha	Zonse ≤1.0
3	Kukula		2-10μm ufa wa 4N 5N5 5N chiyero, -100mesh ufa wa 6N chiyero
4	Kulongedza		1kg mu botolo la polyethylene ndi thumba lapulasitiki losindikizidwa kunja

Indium oxide mu₂O₃ kapena Indium Trioxide In₂O₃ku Western Minmetals (SC) Corporation ikhoza kuperekedwa ndi chiyero cha 99.99%, 99.995%, 99.999% ndi 99.9999% 4N 4N5 5N 6N mu kukula kwa 2-10 micron kapena -100 mauna ufa ndi nano kalasi, 1kg Thyle odzaza ndi polye thumba la pulasitiki losindikizidwa, kenaka bokosi la makatoni kunja, kapena monga makonda okhazikika pamayankho abwino.

Indium oxide mu₂O₃amagwiritsidwa ntchito ponseponse mu photoelectric, sensa ya gasi, filimu yopyapyala yofiira yofiira, chothandizira, zowonjezera zamtundu wa galasi, mabatire amchere, ndi ma switch amagetsi amakono ndi zolumikizira, zokutira zoteteza za galasi lachitsulo, komanso filimu ya semiconductor ya electro-optical. kuwonetsera ndi zina₂O₃ndiye gawo lalikulu la chandamale cha ITO chowonetsera, mawindo osagwiritsa ntchito mphamvu ndi ma photovoltaics.Komanso, In₂O₃ali ngati chinthu chotsutsa mu ICs kuti apange heterojunctions ndi zipangizo monga p-InP, n-GaAs, n-Si ndi semiconductors ena.Pakadali pano, Kukhala ndi mawonekedwe apamwamba, kukula kochepa komanso macroscopic quantum tunneling effect, Nano In₂O₃ndi makamaka zokutira kuwala ndi antistatic, mandala conductive zokutira ntchito.