Indium Phosphide InP

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Indium Phosphide InP,CAS No.22398-80-7, yosungunuka 1600 ° C, binary compound semiconductor ya III-V family, face-centered cubic "zinc blende" crystal structure, yofanana ndi ambiri a III-V semiconductors, amapangidwa kuchokera 6N 7N chiyero choyera cha indium ndi phosphorous, ndipo chimakula kukhala crystal imodzi ndi LEC kapena VGF.Indium Phosphide crystal imapangidwa kuti ikhale yamtundu wa n, p-type kapena semi-insulating conductivity kuti ipangikenso kabati kakang'ono mpaka 6" (150 mm) m'mimba mwake, yomwe imakhala ndi kusiyana kwake kwa bandi, kusuntha kwapamwamba kwa ma elekitironi ndi mabowo komanso kutentha kwabwino. conductivity.Indium Phosphide InP Wafer prime kapena test grade ku Western Minmetals (SC) Corporation ikhoza kuperekedwa ndi p-type, n-mtundu ndi theka-insulating conductivity kukula kwa 2" 3" 4" ndi 6" (mpaka 150mm) awiri, mawonekedwe <111> kapena <100> ndi makulidwe 350-625um okhala ndi mapeto okhazikika ndi opukutidwa kapena okonzeka Epi.Pakadali pano Indium Phosphide Single Crystal ingot 2-6 ″ ikupezeka mukapempha.Polycrystalline Indium Phosphide InP kapena Multi-crystal InP ingot mu kukula kwa D(60-75) x Utali (180-400) mm wa 2.5-6.0kg yokhala ndi ndende yonyamula zosakwana 6E15 kapena 6E15-3E16 ikupezekanso.Chilichonse chokhazikika chomwe chilipo mukafunsidwa kuti mukwaniritse yankho langwiro.

Mapulogalamu

Indium Phosphide InP wafer imagwiritsidwa ntchito kwambiri popanga zida za optoelectronic, zida zamagetsi zamphamvu kwambiri komanso zothamanga kwambiri, monga gawo lapansi la epitaxial indium-gallium-arsenide (InGaAs) yotengera zida zamagetsi zamagetsi.Indium Phosphide ikupanganso zowunikira zowunikira kwambiri pazolumikizana ndi fiber optical, zida zamagetsi za microwave, ma amplifiers a microwave ndi zida zama Gate FETs, ma modulator othamanga kwambiri ndi zowunikira zithunzi, ndikuyenda pa satellite ndi zina zotero.

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Indium Phosphide InP

Indium Phosphide Single CrystalWafer (InP crystal ingot kapena Wafer) ku Western Minmetals (SC) Corporation ikhoza kuperekedwa ndi p-type, n-type ndi semi-insulating conductivity kukula kwa 2" 3" 4" ndi 6" (mpaka 150mm) awiri, mawonekedwe <111> kapena <100> ndi makulidwe 350-625um okhala ndi mapeto okhazikika ndi opukutidwa kapena okonzeka Epi.

Indium Phosfide Polycrystallinekapena Multi-Crystal ingot (InP poly ingot) mu kukula kwa D(60-75) x L(180-400) mm ya 2.5-6.0kg yokhala ndi zonyamulira zosakwana 6E15 kapena 6E15-3E16 zilipo.Chilichonse chokhazikika chomwe chilipo mukafunsidwa kuti mukwaniritse yankho langwiro.

Ayi.	Zinthu	Mafotokozedwe Okhazikika
1	Indium Phosphide Single Crystal	2"	3"	4"
2	Diameter mm	50.8±0.5	76.2±0.5	100±0.5
3	Njira Yakukula	Zithunzi za VGF	Zithunzi za VGF	Zithunzi za VGF
4	Conductivity	P/Zn-doped, N/(S-doped kapena un-doped), Semi-insulating
5	Kuwongolera	(100)±0.5°, (111)±0.5°
6	Makulidwe μm	350 ± 25	600 ± 25	600 ± 25
7	Oriental Flat mm	16 ±2	22 ±1	32.5 ± 1
8	Chizindikiritso Flat mm	8 ±1	11 ±1	18 ±1
9	Kusuntha kwa cm2 / Vs	50-70, >2000, (1.5-4)E3
10	Chonyamulira Concentration cm-3	(0.6-6)E18, ≤3E16
11	TTV max	10	10	10
12	Pepani μm max	10	10	10
13	Warp μm max	15	15	15
14	Kachulukidwe wa dislocation cm-2 max	500	1000	2000
15	Pamwamba Pamwamba	P/E, P/P	P/E, P/P	P/E, P/P
16	Kulongedza	Chidebe chopyapyala chimodzi chosindikizidwa mu thumba la aluminium composite.

Ayi.	Zinthu	Mafotokozedwe Okhazikika
1	Indium Phosphide Ingot	Poly-Crystalline kapena Multi-Crystal Ingot
2	Kukula kwa Crystal	D(60-75) x L(180-400)mm
3	Kulemera kwa Crystal Ingot	2.5-6.0Kg
4	Kuyenda	≥3500 cm²/VS
5	Carrier Concentration	≤6E15, kapena 6E15-3E16 cm^-3
6	Kulongedza	Ingot iliyonse ya kristalo ya InP ili m'thumba lapulasitiki losindikizidwa, ma ingo 2-3 mubokosi limodzi la makatoni.

Linear Formula	InP
Kulemera kwa Maselo	145.79
Kapangidwe ka kristalo	Zinc kuphatikiza
Maonekedwe	Crystalline
Melting Point	1062 ° C
Boiling Point	N / A
Kuchuluka kwa 300K	4.81g/cm³
Mphamvu Gap	1.344 eV
Intrinsic resistivity	8.6E7 Ω-cm
Nambala ya CAS	22398-80-7
Nambala ya EC	244-959-5

Indium Phosphide InP Waferamagwiritsidwa ntchito kwambiri popanga zida za optoelectronic, zida zamphamvu kwambiri komanso zothamanga kwambiri, monga gawo lapansi la epitaxial indium-gallium-arsenide (InGaAs) pogwiritsa ntchito zida zamagetsi zamagetsi.Indium Phosphide ikupanganso zowunikira zowunikira kwambiri pazolumikizana ndi fiber optical, zida zamagetsi zamagetsi za microwave, ma amplifiers a microwave ndi zida zama Gate FETs, ma modulator othamanga kwambiri ndi zowunikira zithunzi, ndikuyenda pa satellite ndi zina zotero.